Voltage controlled attenuator using PN diodes

Details Voltage controlled attenuator using PN diodes Voltage controlled attenuator using PN diodes

1994-12-21

1996-10-15

Lee, Benny

Wave transmission lines and networks

Attenuators

333 81A, 327308, H01P 122

Patent

active

055658237

ABSTRACT:
A fully integrator RF attenuator performs gain control upon a received RF signal without the use of an off-silicon PIN diode. The attenuator includes a T-configuration pad in conjunction with a current source. A direct current signal biases a shunt element in the T-pad. Preferably, a voltage control signal which controls the direct current is generated as a negative feedback signal in proportion to the magnitude of the RF detected at the attenuator output.

REFERENCES:
patent: 4019160 (1977-04-01), Kam
patent: 4654610 (1987-03-01), Dasilva
patent: 5126703 (1992-06-01), Kosuga
patent: 5140200 (1992-08-01), Stanton
patent: 5204643 (1993-04-01), Verronen
patent: 5262741 (1993-11-01), Kitakubo
patent: 5270824 (1993-12-01), Dobrovolny

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