Voltage control circuit, a voltage control method and a...

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Reexamination Certificate

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C365S203000, C365S191000, C365S189090, C365S185250

Reexamination Certificate

active

07729190

ABSTRACT:
A semiconductor memory device includes a voltage control circuit providing different voltages as a precharge voltage in accordance with an active state and a standby stage. The semiconductor memory device is arranged in a peripheral region, whereby the different voltages can be provided as a precharge voltage in accordance with the active state and the standby state and thus leakage current is reduced and area efficiency is enhanced.

REFERENCES:
patent: 6049495 (2000-04-01), Hsu et al.
patent: 6449204 (2002-09-01), Arimoto et al.
patent: 6870790 (2005-03-01), Horiguchi et al.
patent: 7149131 (2006-12-01), Choi et al.
patent: 1020020002681 (2002-01-01), None

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