Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Patent
1994-05-04
1995-09-12
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
257489, 257510, 257517, 257523, H01L 29417, H01L 2943, H01L 2947
Patent
active
054499259
ABSTRACT:
Voltage breakdown resistant monocrystalline silicon carbide semiconductor devices are obtained by forming an amorphous silicon carbide termination region in a monocrystalline silicon carbide substrate, at a face thereof, adjacent and surrounding a silicon carbide device. The amorphous termination region is preferably formed by implanting electrically inactive ions, such as argon, into the substrate face at sufficient energy and dose to amorphize the substrate face. The device contact or contacts act as an implantation mask to provide a self-aligned termination region for the device. The terminated devices may exhibit voltage breakdown resistance which approaches the ideal value for silicon carbide.
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patent: 3897273 (1975-07-01), Marsh et al.
patent: 5270244 (1993-12-01), Baliga
patent: 5399883 (1995-03-01), Baliga
Improvement of Breakdown Voltage Characteristics of GaAs Junction by Damage-Creation of Ion-Implantation, Shimamoto et al., Institute of Physics Conference Series, No. 120, Chapter 4, pp. 199-202, 1992.
Edge Terminations for High Voltage SiC Schottky Barrier Rectifiers, Bhatnagar et al., International Symposium on Power Semiconductor Devices, 1993 Proceedings, Abstract 4.2, pp. 89-94, 1993.
Alok Dev
Baliga Bantval J.
Crane Sara W.
North Carolina State University
Tang Alice W.
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