Voltage boosting circuit for high-potential-side MOS switching t

Details Voltage boosting circuit for high-potential-side MOS switching t Voltage boosting circuit for high-potential-side MOS switching t

1997-09-04

1999-06-22

Berhane, Adolf Deneke

Electricity: power supply or regulation systems

Output level responsive

Using a three or more terminal semiconductive device as the...

323284, G05F 156

Patent

active

059145897

ABSTRACT:
An electric circuit comprising at least one MOS switching transistor disposed on the side of high potential and a switchable charge pump supporting the switching-on phase of the MOS switching transistor at a pumping voltage output thereof with a pumping voltage higher than the potential of the supply voltage on the side of high potential at a pumping voltage output thereof. A control gate of the MOS switching transistor is connectable by means of a controllable switch to a high-potential-side supply voltage terminal or to the pumping voltage output depending on whether a predetermined threshold value on the switching-on ascending edge of the MOS switching transistor signal is exceeded or not.

REFERENCES:
patent: 5473283 (1995-12-01), Luich
patent: 5532636 (1996-07-01), Mar et al.
patent: 5767735 (1998-06-01), Javanifard et al.

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