Voltage booster circuit using level shifter composed of two comp

Details Voltage booster circuit using level shifter composed of two comp Voltage booster circuit using level shifter composed of two comp

1976-04-06

1977-06-14

Heyman, John S.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

58 23A, 307246, 307247R, 307279, 307DIG1, 307DIG4, H03K 114, H03K 3353, H03K 1760, G04C 300

Patent

active

040299732

ABSTRACT:
This specification discloses an improvement for a voltage booster circuit. The improvement lies mainly in the use of MISFETs as switching means in a level converting circuit constructed in a complementary MIS semiconductor integrated circuit and therefore the voltage loss due to the conventional switching means can be prevented.

REFERENCES:
patent: 2907895 (1959-10-01), Van Overbeek
patent: 3521141 (1970-07-01), Walton
patent: 3916430 (1975-10-01), Heuner et al.
B548,302, Feb. 1976, Stafford et al., 307/251.
Froemke, "Insulated Gate Field Effect Transistor", IBM Tech. Discl. Bull.; vol. 9, No. 9, pp. 1234-1235; 2/1967.

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