Voltage booster circuit and semiconductor device for...

Details Voltage booster circuit and semiconductor device for... Voltage booster circuit and semiconductor device for...

2005-06-14

2005-06-14

Laxton, Gary L. (Department: 2838)

Electricity: power supply or regulation systems

Self-regulating

Using a three or more terminal semiconductive device as the...

C323S317000, C327S536000, C327S537000, C363S060000

Reexamination Certificate

active

06906504

ABSTRACT:
A boost voltage circuit includes a plurality of N channel type MOS transistors connected between an input terminal and an output terminal in series, wherein one electrode of each of the N channel type MOS transistors is connected to each of external terminals to which a capacitor can be connected to generate a boost voltage. A plurality of P channel type MOS transistors are respectively connected to each of the N channel type MOS transistors in parallel. Thereby, a boost voltage circuit with improved stability is provided so that the boost voltage circuit is started without increase of consumption current.

REFERENCES:
patent: 6107764 (2000-08-01), Blackburn
patent: 6107864 (2000-08-01), Fukushima et al.
patent: 6191963 (2001-02-01), McPartland et al.
patent: 6373322 (2002-04-01), Kobayashi et al.
patent: 6414862 (2002-07-01), Ogura
patent: 6459330 (2002-10-01), Yasue
patent: 57021937 (1982-02-01), None

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