Voltage booster circuit

Details Voltage booster circuit Voltage booster circuit

1980-05-09

1982-08-24

Zazworsky, John

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307475, 307578, H03K 602, H03K 502

Patent

active

043463100

ABSTRACT:
An MOS voltage boost circuit includes a first field-effect-transistor coupled between ground and an output node and a second, depletion type, field effect transistor coupled between the output node and a source of supply voltage (V.sub.DD). The first transistor is turned off by a disabling signal, and the second transistor is turned on by an enabling signal derived, in part, from the disabling signal. This produces a first voltage at the output node. A third field-effect-transistor is capacitively coupled between the output node and the enabling signal to boost the output voltage when the enabling signal terminates.

REFERENCES:
patent: 4010388 (1977-03-01), Alvarez, Jr.
patent: 4029973 (1977-06-01), Kobayashi et al.
patent: 4049979 (1977-09-01), Shieu et al.
patent: 4061929 (1977-12-01), Asano
patent: 4176289 (1979-11-01), Leach et al.

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