Voltage bias and temperature compensation circuit for radio freq

Details Voltage bias and temperature compensation circuit for radio freq Voltage bias and temperature compensation circuit for radio freq

1996-06-13

1998-03-03

Mottola, Steven

Amplifiers

With semiconductor amplifying device

Including field effect transistor

330289, 330296, H03F 316

Patent

active

057240043

ABSTRACT:
A communication device (104) includes a radio frequency power amplifier (202) and a bias circuit (204). The power amplifier (202) includes a depletion mode MESFET (214) for RF power amplification. To properly bias the MESFET (214) in a circuit including logic components powered by a conventional battery (136), the bias circuit (204) includes a level shifter (223) to provide the necessary gate-to-source voltage for the MESFET (214). To maintain the RF output power from the communication device (104) constant over temperature, the bias circuit (204) output voltage varies over temperature to track the temperature variation of the MESFET (214).

REFERENCES:
patent: 5373250 (1994-12-01), Gatti et al.
patent: 5408697 (1995-04-01), Price et al.
patent: 5506544 (1996-04-01), Staudinger et al.

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