Voltage and temperature compensated emitter-follower driver

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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Details

307275, 307270, H03K 1200, H03K 301

Patent

active

052202046

ABSTRACT:
The switching frequency of switching power supplies using bipolar emitter-follower transistor amplifiers to drive field-effect output transistors is increased from a currently typical frequency of 100 KHz to at least 1.5 MHz. by reducing the heating in the bipolar transistors. The heating, which is caused by the inherent 0.7 volt drop in the base-emitter junction of the bipolar transistor, is eliminated by feeding back from a dual core output transformer, a compensating voltage equal to the junction drop, the feedback winding being wound over only one core, and the output signal windings being wound over both cores. The flux in the feedback winding core of the transformer is limited by means of a diode to keep the feedback voltage substantially the same as the forward voltage of the base-emitter junction of the bipolar transistor. The core of the transformer is temperature compensating to keep the feedback voltage correct over temperature extremes. The input signal is coupled to the input of the emitter-follower transistor through the feedback windings of the transformer so that the feedback voltage is added to the input signal. In this way the emitter voltage on the emitter-follower transistor is forced to drive to the level of the supply voltage, thereby eliminating the base-emitter junction voltage drop from the emitter-collector voltage drop. This increases the efficiency of the emitter-follower amplifier to such a degree that it has many times the power handling capacity. This allows operation at much higher frequencies.

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