Volatile precursors for copper CVD

Details Volatile precursors for copper CVD Volatile precursors for copper CVD

1991-09-20

1993-02-16

Dees, Jose G.

Organic compounds -- part of the class 532-570 series

Organic compounds

Heavy metal containing

556113, C07F 108, C07F 708

Patent

active

051873001

ABSTRACT:
Volatile liquid or low melting solid organometallic copper complexes are provided which are capable of selectively depositing a copper film onto metallic or other electrically conducting portions of a substrate surface under CVD conditions. These organometallic copper complexes are represented by the structural formula: ##STR1## wherein R.sup.1 and R.sup.3 are each independently C.sub.1 -C.sub.8 perfluoroalkyl, R.sup.2 is H, F or C.sub.1 -C.sub.8 perfluoroalkyl, R.sup.4 is C.sub.1 -C.sub.8 alkyl, phenyl, or Si(R.sup.5).sub.3, and each R.sup.5 is independently C.sub.1 -C.sub.8 alkyl or phenyl. A process for depositing copper films using these organometallic copper complexes is also provided.

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