Volatile organogallium compound and deposition of gallium...

Details Volatile organogallium compound and deposition of gallium... Volatile organogallium compound and deposition of gallium...

2000-06-15

2001-12-11

Nazario-Gonzalez, Porfirio (Department: 1621)

Organic compounds -- part of the class 532-570 series

Organic compounds

Heavy metal containing

C427S255394, C427S590000, C427S594000

Reexamination Certificate

active

06329540

ABSTRACT:

FIELD OF THE INVENTION
The present invention relates to a novel, volatile organogallium compound; a process of the preparation thereof; and a metal organic chemical vapor deposition (MOCVD) process for forming a gallium nitride film on a substrate using said compound.
BACKGROUND OF THE INVENTION
GaN films are used in blue electroluminescent diodes and in generating blue laser. There have been reported studies to prepare such films by metal organic chemical vapor deposition (MOCVD) using such organogallium compounds as triethylgallium.amine adduct, bis(dialkyl-&mgr;-amido-gallium), bis[dimethyl(1,1-dimethylhydrazido)gallium] and the like (see J. E. Andrews and M. A. Littlejohn,
J. Electrochem. Soc.,
122, 1273 (1975); U.S. Pat. No. 4,975,299 and European Patent Application 0 295 467 A2; and V. Lakhotia, D. A. Neumayer, A. H. Cowley, R. A. Jones and J. G. Ekerdt,
Chem. Mater.,
7,546 (1995)).
However, as these GaN precursors exist in the form of dimers or trimers, which are often solids at room temperature, they are difficult to handle in MOCVD due mainly to their low vapor pressures. Further, these conventional precursors are known to give GaN films which have lattice nitrogen defects.
The present inventors have endeavored to develop a novel compound which can be employed in an improved MOCVD process for preparing a GaN film of improved quality, and have discovered that an azidodialkylgallium.hydrazine adduct has high volatility and can be effectively used in MOCVD to form a GaN film having no significant amount of nitrogen defects.
SUMMARY OF THE INVENTION
Accordingly, it is an object of the present invention to provide a novel organogallium compound which has high volatility and can be advantageously used in forming a GaN film of improved quality.
It is another object of the present invention to provide a process for preparing said compound.
It is a further object of the present invention to provide a process for depositing a GaN film on a substrate using said compound.
In accordance with one aspect of the present invention, there is provided an organogallium compound of formula(I):
R
1
R
2
(N
3
)Ga.(R
3
HNNR
4
H)  (I)
wherein, R
1
and R
2
are each independently C
1-5
alkyl; and R
3
and R
4
are each independently hydrogen or C
1-5
alkyl.
In accordance with another aspect of the present invention, there is provided a process for preparing a compound of formula(I) comprising the steps of: (a) reacting a compound of formula(II) with a compound of formula(III) to give a compound of formula(IV), and (b) reacting the compound of formula(IV) with sodium azide:
(R
3
HNNHR
4
).HX  (II)
 R
3
Ga  (III)
R
2
(X)Ga.(R
3
HNNR
4
H)  (IV)
wherein, X is halogen; R
3
and R
4
are the same as defined in formula(I) above; and R is C
1-5
alkyl.
In accordance with further another aspect of the present invention, there is provided a process for depositing a GaN film on a substrate which comprises bringing the vapor of the compound of formula(I) into contact with a substrate heated to a temperature ranging from 400 to 800° C.


REFERENCES:
patent: 4792467 (1988-12-01), Melas et al.
patent: 5178911 (1993-01-01), Gordon et al.
patent: 5650198 (1997-07-01), Denbaars et al.
patent: 6017774 (2000-01-01), Yuasa et al.
patent: 6106899 (2000-08-01), Takamatsu et al.

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