Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1981-10-13
1984-01-17
Saba, W. G.
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
118724, 118726, 118727, 118900, 148 15, 148174, 156611, 156612, 156DIG70.DIG.103, 427 87, 427294, H01L 21203, H01L 21363
Patent
active
044262370
ABSTRACT:
When growing GaAs by molecular beam epitaxy (MBE), a typical related reaction acts to affix Ga.sub.2 O.sub.3 to the growth surface and hence incorporates such oxide contaminants in the epitaxial layer as it is grown. Such contaminants may yield crystals of poor electrical and optical properties. When Al is added to the Ga source crucible, the Ga.sub.2 O flux is reduced substantially thereby suppressing the formation of such oxide contaminants and remove a serious constraint to MBE growth. When doping GaAs with Mg to form a p-type GaAs layer, unity Mg doping efficiency is achieved by including 0.1% Al in the Ga effusion cell. Such an inclusion of Al improves the Mg doping efficiency by suppressing the formation of MgO, and allows MBE growth at lower substrate temperatures and at higher growth rates.
REFERENCES:
patent: 3615931 (1971-10-01), Arthur et al.
patent: 3647389 (1972-03-01), Weiner
patent: 3839084 (1974-10-01), Cho et al.
patent: 3974002 (1976-08-01), Casey et al.
patent: 4159919 (1979-07-01), McFee et al.
patent: 4239584 (1980-12-01), Chang et al.
Chang et al., "Source Shaping . . . by Molecular Beam Epitaxy", I.B.M. Tech. Discl. Bull., vol. 15, No. 1, Jun. 1972, pp. 180-181.
Chang et al., "Fabrication for Multilayer Semiconductor Devices", Ibid, vol. 15, No. 2, Jul. 1972, pp. 365-366.
Ludeke et al., "Fabrication for a Tunable . . . Injection Laser", Ibid., vol. 15, No. 2, Jul. 1972, pp. 546-547.
R. A. Stall, et al., Electron. Letter 16 (5), pp. 171-172, (1980).
T. A. Murotani, et al., Journal of Crystal Growth, 45, pp. 302-308, (1978).
A. Y. Cho, et al., Journal of Appl. Physics, 43 (12), pp. 5118-5123, (1972).
C. N. Cochran, et al., Journal of Electrochemical Soc., 109, No. 2, Feb. 1962, pp. 144-148, "Vapor Pressure of Gallium, Stability of Gallium Suboxide Vapor, and Equilibria of Some Reactions . . . ".
Freeouf John L.
Kirchner Peter D.
Pettit George D.
Woodall Jerry M.
International Business Machines - Corporation
Saba W. G.
Yee Yen S.
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