Static information storage and retrieval – Powering
Reexamination Certificate
2005-11-17
2008-09-30
Luu, Pho M. (Department: 2824)
Static information storage and retrieval
Powering
C365S227000, C365S228000, C365S229000
Reexamination Certificate
active
07430148
ABSTRACT:
Integrated circuits are provided that have memory elements. The memory elements produce output signals. The integrated circuits may be programmable logic device integrated circuits containing programmable logic including transistors with gates. When loaded with configuration data, the memory elements produce output signals that are applied to the gates of the transistors in the programmable logic device to customize the programmable logic. To ensure that the transistors in the programmable logic are turned on properly, the memory elements are powered with an elevated power supply level during normal device operation. During data loading operations, the power supply level for the memory elements is reduced. Reducing the memory element power supply level during loading increases the write margin for the memory elements.
REFERENCES:
patent: 5025417 (1991-06-01), Miyamoto et al.
patent: 5122846 (1992-06-01), Haken
patent: 5214327 (1993-05-01), Saeki et al.
patent: 5432467 (1995-07-01), Reddy
patent: 5642315 (1997-06-01), Yamaguchi
patent: 5757702 (1998-05-01), Iwata et al.
patent: 5801551 (1998-09-01), Lin
patent: 5920201 (1999-07-01), Mehrotra et al.
patent: 6025737 (2000-02-01), Patel et al.
patent: 6114843 (2000-09-01), Olah
patent: 6232893 (2001-05-01), Cliff et al.
patent: 6433585 (2002-08-01), Patel et al.
patent: 6724222 (2003-02-01), Patel et al.
patent: 6795332 (2004-09-01), Yamaoka et al.
patent: 6897679 (2005-05-01), Cliff et al.
patent: 6995584 (2006-02-01), Nguyen et al.
patent: 7277351 (2007-10-01), Liu et al.
patent: 2004/0093529 (2004-05-01), Devlin et al.
patent: 2007/0109017 (2007-05-01), Liu et al.
patent: 2007/0113106 (2007-05-01), Liu et al.
Chan Mark T.
Liu Lin-Shih
Altera Corporation
Luu Pho M.
Treyz G. Victor
Treyz Law Group
LandOfFree
Volatile memory elements with boosted output voltages for... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Volatile memory elements with boosted output voltages for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Volatile memory elements with boosted output voltages for... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3981207