Volatile liquid precursors for the chemical vapor deposition of

Details Volatile liquid precursors for the chemical vapor deposition of Volatile liquid precursors for the chemical vapor deposition of

1991-10-23

1992-09-01

Dees, Jose G.

Organic compounds -- part of the class 532-570 series

Organic compounds

Heavy metal containing

556117, 556465, C07F 108, C07F 708

Patent

active

051440490

ABSTRACT:
Volatile liquid organometallic copper complexes are provided which are capable of selectively depositing a copper film onto metallic or other electrically conducting portions of a substrate surface under CVD conditions. There organometallic copper complexes are represented by the structural formula: ##STR1## wherein R.sup.1 and R.sup.3 are each independently C.sub.1 -C.sub.8 perfluoroalkyl, R.sup.2 is H, F or C.sub.1 -C.sub.8 perfluoroalkyl, R.sup.4 is H, C .sub.1 -C.sub.8 alkyl, or Si(R.sup.6).sub.3, each R.sup.5 is independently H or C.sub.1 -C.sub.8 alkyl and each R .sup.6 is independently phenyl or C.sub.1 -C.sub.8 alkyl. A process for depositing copper films using these organometalic copper complexes is also provided.

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