Volatile copper (II) complexes and reducing agents for...

Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material

Reexamination Certificate

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C556S033000, C546S002000, C427S255280, C427S304000

Reexamination Certificate

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11472108

ABSTRACT:
The present invention relates to novel 1,3-diimine copper complexes and the use of 1,3-diimine copper complexes for the deposition of copper on substrates or in or on porous solids in an Atomic Layer Deposition process.

REFERENCES:
patent: 5464666 (1995-11-01), Fine et al.
patent: 2003/0232142 (2003-12-01), Bradley et al
patent: 2005/0003075 (2005-01-01), Bradley et al.
patent: 2005/0158479 (2005-07-01), Bradley et al.
patent: 2005/0227007 (2005-10-01), Bradley et al.
patent: 2006/0182884 (2006-08-01), Bradley et al.
patent: 42 02 889 (1993-08-01), None
McGeachin, S.G., Canadian Journal of Chemistry, vol. 46, pp. 1903-1912 (1968).

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