Volatile copper (II) complexes and reducing agents for...

Details Volatile copper (II) complexes and reducing agents for... Volatile copper (II) complexes and reducing agents for...

2007-09-11

2007-09-11

Nazario-Gonzalez, Porfirio (Department: 1621)

Active solid-state devices (e.g., transistors, solid-state diode

Organic semiconductor material

C556S033000, C546S002000, C427S255280, C427S304000

Reexamination Certificate

active

11472108

ABSTRACT:
The present invention relates to novel 1,3-diimine copper complexes and the use of 1,3-diimine copper complexes for the deposition of copper on substrates or in or on porous solids in an Atomic Layer Deposition process.

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patent: 2006/0182884 (2006-08-01), Bradley et al.
patent: 42 02 889 (1993-08-01), None
McGeachin, S.G., Canadian Journal of Chemistry, vol. 46, pp. 1903-1912 (1968).

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