Volatile and nonvolatile random access memory cell

Details Volatile and nonvolatile random access memory cell Volatile and nonvolatile random access memory cell

1977-08-29

1978-07-25

Fears, Terrell W.

Static information storage and retrieval

Powering

Data preservation

307238, 365174, 365182, G11C 1140

Patent

active

041033485

ABSTRACT:
A random access memory cell for storing information in both volatile and nonvolatile form is described incorporating a dual gate variable threshold transistor, a capacitor, and three field effect transistors. The dual gate variable threshold transistor may include a fixed threshold and a variable threshold field effect transistor.

REFERENCES:
patent: 3728695 (1973-04-01), Frohman-Bentchkowsky
IBM Tech. Discl. Bul., vol. 17, No. 8, Jan. 1975, pp. 2314-2315, "Nonvolatile Memory Array w/ a Single Famos Device per Cell", R. C. Dockerty.

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