Voidless metallization on titanium aluminide in an interconnect

Details Voidless metallization on titanium aluminide in an interconnect Voidless metallization on titanium aluminide in an interconnect

1997-04-24

2000-01-18

Tran, Minh Loan

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257765, 257771, 257750, 257751, H01L 2348, H01L 2352, H01L 2940

Patent

active

060160101

ABSTRACT:
Disclosed is a method for in situ formation of titanium aluminide. The disclosed method is directed to overcoming voiding problems which result in conventional titanium and aluminum metal interconnect stacks. The steps of the method comprise first providing a silicon substrate, which typically comprises an in-process integrated circuit wafer. Next, an insulating passivation layer is provided on the silicon substrate. The next step is the sputtering of a titanium layer of a given thickness over the passivation. Subsequently, an aluminum film of three times the thickness of the titanium layer is sputtered over the titanium layer. The next step comprises annealing the titanium layer and the aluminum film in situ in a metal anneal chamber to form titanium aluminide. Following the in situ anneal, the remainder of the needed aluminum is sputtered over the titanium aluminide and a further passivation layer of titanium nitride is then sputtered over the aluminum. Finally, the entire wafer is annealed in a furnace, thereby completing the metal interconnect stack.

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