Void formation monitoring in a damascene process

Details Void formation monitoring in a damascene process Void formation monitoring in a damascene process

2005-11-15

2005-11-15

Wilczewski, Mary (Department: 2822)

Semiconductor device manufacturing: process

With measuring or testing

C438S637000, C438S638000, C438S666000, C438S672000, C438S687000

Reexamination Certificate

active

06964874

ABSTRACT:
The invention provides a technique of monitoring the void formation in a damascene interconnection process. According to the invention, a test structure is provided that includes at least two damascene structures that have at least one different cross-sectional geometric parameter. To monitor the void formation, the test structure is cut to expose a cross-sectional view to the damascene structures. The cross-sectional view is then inspected and the void formation is investigated in each of the damascene structures. The invention is particularly applicable to multi-level copper-based dual-damascene interconnection processes to monitor the voiding at the interface between barrier layers and bottom metal trenches. The invention allows monitoring of the void formation by locating only one structure on the chip and performing only one cut.

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