Coating processes – Direct application of electrical – magnetic – wave – or... – Ion plating or implantation
Patent
1997-05-09
1999-03-23
Padgett, Marianne
Coating processes
Direct application of electrical, magnetic, wave, or...
Ion plating or implantation
427531, 427162, 4273762, 117108, C23C 1408, C23C 1414, B05D 506, B05D 302
Patent
active
058856650
ABSTRACT:
A method for forming crystallographically coherent precipitates of vanadium dioxide in the near-surface region of sapphire and the resulting product is disclosed. Ions of vanadium and oxygen are stoichiometrically implanted into a sapphire substrate (Al.sub.2 O.sub.3), and subsequently annealed to form vanadium dioxide precipitates in the substrate. The embedded VO.sub.2 precipitates, which are three-dimensionally oriented with respect to the crystal axes of the Al.sub.2 O.sub.3 host lattice, undergo a first-order monoclinic-to-tetragonal (and also semiconducting-to-metallic) phase transition at .about.77.degree. C. This transformation is accompanied by a significant variation in the optical transmission of the implanted region and results in the formation of an optically active, thermally "switchable" surface region on Al.sub.2 O.sub.3.
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Boatner Lynn A.
Gea Laurence A.
Caress Virginia B.
Gottlieb Paul A.
Moser William R.
Padgett Marianne
The United States of America as represented by the United States
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