VLSI memory with increased memory access speed, increased memory

Details VLSI memory with increased memory access speed, increased memory VLSI memory with increased memory access speed, increased memory

1992-07-09

1993-08-31

Dixon, Joseph L.

Static information storage and retrieval

Read only systems

Semiconductive

365 51, 365 63, 36523003, G11C 506, G11C 1708

Patent

active

052414973

ABSTRACT:
The performance of a Very Large Scale Integrated Read-Only Memory Circuit is improved by providing an architecture for columns of memory cells so that a signal from an addressed memory cell need propagate on diffusion bit lines by a distance approximately equal to the length of the diffusion bit line within a single block of memory cells. The architecture of the memory layout is improved by providing bit line and virtual ground line contacts at opposing ends of the memory block and by replicating the memory block through mirror symmetry on the semiconductor substrate. The memory array is further improved by providing bank selection transistors for each bank at each opposing end of a memory block so the propagation signal of an addressed memory cell need only travel the length of a single bit diffusion line in the bank.

REFERENCES:
patent: 4281397 (1981-07-01), Neal et al.
patent: 4388705 (1983-06-01), Sheppard
patent: 4460981 (1984-07-01), Van Buskirk et al.
patent: 4638459 (1987-01-01), Pechar, Jr. et al.
patent: 4969123 (1990-11-01), Norwood et al.
patent: 4992980 (1991-02-01), Pack et al.
patent: 5016216 (1991-05-01), Ali
patent: 5022008 (1991-06-01), Schreck et al.
patent: 5027321 (1991-06-01), Park
Okada et al., "16MB Design Using Bank Select Architecture", 1988 Symposium on VLSI Circuit Digest of Technical Papers pp. 85-86.

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