Visible wavelength, semiconductor optoelectronic device with a h

Details Visible wavelength, semiconductor optoelectronic device with a h Visible wavelength, semiconductor optoelectronic device with a h

1999-01-08

2000-11-14

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 3085

Patent

active

061480134

ABSTRACT:
A Group III-V semiconductor optoelectronic device provides for visible wavelength light output having a more laterally uniform, high power beam profile, albeit still quasi-Gaussian. A number of factors contribute to the enhanced profile including an improvement in reducing band offset of the Group III-V deposited layers improving carrier density through a decrease in the voltage drop require to generate carrier flow; reduction of contaminants in the growth of Group III-V AlGaInP-containing layers with compositional Al, providing for quality material necessary to achieve operation at the desired visible wavelengths; the formation of an optical resonator cavity that provides, in part, weak waveguiding of the propagating light; and the utilization of a mechanism to provide for beam spreading and filing in a beam diverging gain section prior to actively aggressive gain pumping of the propagating light in the device.

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K. Kobayashi et al., "AlGaInP Double heterostructure Visible Light Laser Diodes with a GaInP Active Layer Grown By Metalorganic Vapor Phase Epitaxy", IEEE Journal of Quantum Electronics, vol. QE-23 (6), pp. 704-711, Jun. 1987.
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