Visible/near infrared image sensor array

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S291000, C257S292000, C257S461000, C257S462000, C257S233000, C257S258000, C257SE27133

Reexamination Certificate

active

07436038

ABSTRACT:
A MOS or CMOS sensor for high performance imaging in broad spectral ranges including portions of the infrared spectral band. These broad spectral ranges may also include portions or all of the visible spectrum, therefore the sensor has both daylight and night vision capabilities. The sensor includes a continuous multi-layer photodiode structure on a many pixel MOS or CMOS readout array where the photodiode structure is chosen to include responses in the near infrared spectral ranges. A preferred embodiment incorporates a microcrystalline copper indium diselenide/cadmium sulfide photodiode structure on a CMOS readout array. An alternate preferred embodiment incorporates a microcrystalline silicon germanium photodiode structure on a CMOS readout array. Each of these embodiments provides night vision with image performance that greatly surpasses the GEN III night vision technology in terms of enhanced sensitivity, pixel size and pixel count. Further advantages of the invention include low electrical bias voltages, low power consumption, compact packaging, and radiation hardness. In special preferred embodiments CMOS stitching technology is used to provide multi-million pixel focal plane array sensors. One embodiments of the invention made without stitching is a two-million pixel sensor. Other preferred embodiments available using stitching techniques include sensors with 250 million (or more) pixels fabricated on a single wafer. A particular application of these very high pixel count sensors is as a focal plane array for a rapid beam steering telescope in a low earth orbit satellite useful for tracking over a 1500-meter wide track with a resolution of 0.3 meter.

REFERENCES:
patent: 4759947 (1988-07-01), Ishihara et al.
patent: 5599403 (1997-02-01), Kariya et al.
patent: 5665959 (1997-09-01), Fossum et al.
patent: 6252218 (2001-06-01), Chou
patent: 6399873 (2002-06-01), Sano et al.
patent: 6759262 (2004-07-01), Theil et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Visible/near infrared image sensor array does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Visible/near infrared image sensor array, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Visible/near infrared image sensor array will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3993057

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.