Visible light semiconductor laser

Details Visible light semiconductor laser Visible light semiconductor laser

1994-10-05

1996-02-06

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

372 46, H01S 319

Patent

active

054901596

ABSTRACT:
A visible light semiconductor laser includes a GaAs substrate having a surface making a first angle with a (100) surface toward the [011] direction. A semiconductor layer having a surface making a second angle smaller than the first angle with the (100) surface is disposed on a part of the first surface of the GaAs substrate. The semiconductor layer extends in the [011] direction and does not reach the opposite resonator facets of the laser. A first AlGaInP active layer is disposed on the the surface making the second angle with the (100) surface of the semiconductor layer, and the first active layer includes regularly ordered atoms. A second AlGaInP active layer is disposed on the first surface of the GaAs substrate. The second active layer includes disordered atoms and has a band gap energy larger than that of the first active layer. The second active layer serves as a window layer. In this structure, the ordered region and the disordered region of the active layer are produced according to the surface orientation of the underlying crystal layer. As a result, a laser structure in which the disordered region of the active layer is used as a window layer can be fabricated with high uniformity and high reproducibility.

REFERENCES:
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patent: 5153890 (1992-10-01), Bona et al.
patent: 5331657 (1994-07-01), Yoo et al.
Applied Physics Letters, vol. 59, No. 9 Mar. (1989), pp. 1360-1367 Itaya et al, "High Power InGaAlP Visible Light Laser Diode by Hetero Barrier Blocking Structure," Japanese Applied Physics, 27 (Spring Meeting, 1990), p. 930 (No Month Available).
Itaya et al, "New Window-Structure InGaAlP Visible Light Laser Diodes By Self-Selective Zn Diffusion-Induced Disordering", IEEE Journal of Quantum Electronics, vol. 27, No. 6, Jun. 1991 pp. 1496-1500.
Colas et al, "Generation Of Macroscopic Steps On Patterned (100) Vicinal GaAs Surfaces", Applied Physics Letters, vol. 55, No. 9, Aug. 1989, pp. 867-869.
Hamada et al, "GaInP Visible Laser Diodes Grown On Misoriented Substrates", IEEE Journal of Quantum Electronics, vol. 27, No. 6, Jun. 1991, pp. 1483-1490.

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