Visible light laser diode and manufacturing method of visible li

Coherent light generators – Particular active media – Semiconductor

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372 45, H01S 319

Patent

active

055441858

ABSTRACT:
A visible light laser diode includes an etching stopping layer having a lower etching rate in an etching solution than a cladding layer, having a larger band gap energy in bulk than the band gap energy of the active layer, including a layer that stops etching, and having a band gap energy exceeding an energy corresponding to the oscillation wavelength of the visible light laser diode. Therefore, the cladding layer can be selectively etched with satisfactory controllability to a predetermined shape. After the etching process, even with a laminated etching stopping layer partly remaining in the cladding layer, the etching stopping layer does not absorb light emitted from the active layer.

REFERENCES:
patent: 4504952 (1985-03-01), Hartman et al.
patent: 5255279 (1993-10-01), Takahashi et al.
patent: 5381024 (1995-01-01), Valster

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