Coherent light generators – Particular active media – Semiconductor
Patent
1991-09-04
1993-02-23
Epps, Georgia Y.
Coherent light generators
Particular active media
Semiconductor
372 45, H01S 319
Patent
active
051896800
ABSTRACT:
A laser diode producing visible light includes GaInP, AlGaInP system layers and an undoped GaInP active layer, successively grown on a GaAs substrate in a first growth step, a stripe-shaped mesa formed by etching portions of the layers, and GaInP, AlGaInP system layers grown in subsequent growth steps. At least one of the layers formed in the first growth step has a lattice mismatch in a range of 2.times.10.sup.-3 .about.1.times.10.sup.-2 or -5.times.10.sup.-3 .about.-2.times.10.sup.-2 relative to the GaAs substrate. Therefore, a crystalline distortion is produced in layers other than the active layer and the diffusion of zinc into the undoped GaInP active layer is suppressed. As a result, a laser diode having improved characteristics is obtained.
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Hashimoto et al, "Effects of Strained-Layer Structures on the Threshold Current Density of AlGaInP/GaInP Visible Lasers", Applied Physics Letters, vol. 58, No. 9, Mar. 1991, pp. 879-880.
Bour et al, "Organometallic Vapor Phase Epitaxial Growth of (Al.sub.x Ga.sub.1-x).sub.0.5 In.sub.0.5 P and Its Heterostructures", IEEE Journal of Quantum Electronics, vol. 24, No. 9, Sep. 1988, pp. 1856-1863.
Epps Georgia Y.
Mitsubishi Denki & Kabushiki Kaisha
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