Coherent light generators – Particular active media – Semiconductor
Patent
1990-12-27
1991-10-15
Epps, Georgia
Coherent light generators
Particular active media
Semiconductor
372 45, H01S 319
Patent
active
050581201
ABSTRACT:
A visible light emitting semiconductor laser has a double-heterostructure section above the N-type GaAs substrate, which is composed of a nondoped InGaP active layer sandwiched between an N type InGaAlP cladding layer and a P type InGaAlP cladding layer. A P type InGaP thin-film layer formed on the P type cladding layer functions as an etching stopper. Formed sequentially on the etching stopper layer are a P type cladding layer and an N type GaAs current-blocking layer, which have a stripe-shaped groove section in and around their central portion. The groove section has an opening at the top and the bottom portion narrower than the opening, presenting an inverse-trapezoidal cross-sectional profile. This arrangement makes the width of the optical confinement region of the semiconductor laser narrower than that of the current injection region.
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Hatakoshi Gen-ichi
Nishikawa Yukie
Nitta Koichi
Okajima Masaki
Watanabe Yukio
Epps Georgia
Kabushiki Kaisha Toshiba
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