Visible/infrared imaging device with stacked cell structure

Details Visible/infrared imaging device with stacked cell structure Visible/infrared imaging device with stacked cell structure

1984-12-13

1987-03-17

Fields, Carolyn E.

Radiant energy

Infrared-to-visible imaging

250332, 250370, 250339, 357 15, 357 24, 357 30, 357 83, H01L 2714, H01L 3104

Patent

active

046510010

ABSTRACT:
A solid-state image sensing device such as an IT-CCD has first and second photosensing sections which are stacked so that they separately sense visible and infrared image light components contained in input light. The visible image light component contained in image light irradiated through a transparent layer is absorbed by a silicon amorphous layer, thereby sensing a visible image. The remaining light component is transmitted through an insulative layer, and is irradiated into an n.sup.+ diffusion layer which consists of a Schottky diode and serves as the second photosensing section. The infrared image light component is absorbed in the Schottky diode, thereby sensing the infrared light image.

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W. F. Kosonocky et al; "Schottky-Barrier Infrared Image Sensors", RCH Engineer, 27-3, May, Jun., 1982.

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