Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – Plural non-isolated transistor structures in same structure
Reexamination Certificate
2006-06-13
2006-06-13
Tran, Minhloan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
Plural non-isolated transistor structures in same structure
C257S568000, C257S569000, C257S571000, C257S573000, C257S575000
Reexamination Certificate
active
07061074
ABSTRACT:
The present invention is a modified darlington phototransistor wherein a phototransistor is coupled to a Bipolar Junction Transistor (BJT). This design provides a high sensitivity and a fast response and effectively increases the gain of the photocurrent. This circuit is particularly will suited for the readily available CMOS and Bipolar Complementary Metal Oxide Semiconductor (BiCMOS) processes prevalent today.
REFERENCES:
patent: 3925879 (1975-12-01), Weinstein
patent: 4282464 (1981-08-01), Uzuka
patent: 2005/0045804 (2005-03-01), Park et al.
Dang Khoa V.
Terrill Conrad W
Anderson William H.
Romero Andrew
The United States of America as represented by the Dept of the A
Tran Minhloan
Tran Tan
LandOfFree
Visible imaging device using Darlington phototransistors does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Visible imaging device using Darlington phototransistors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Visible imaging device using Darlington phototransistors will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3700893