Visible imaging device using Darlington phototransistors

Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – Plural non-isolated transistor structures in same structure

Reexamination Certificate

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Details

C257S568000, C257S569000, C257S571000, C257S573000, C257S575000

Reexamination Certificate

active

07061074

ABSTRACT:
The present invention is a modified darlington phototransistor wherein a phototransistor is coupled to a Bipolar Junction Transistor (BJT). This design provides a high sensitivity and a fast response and effectively increases the gain of the photocurrent. This circuit is particularly will suited for the readily available CMOS and Bipolar Complementary Metal Oxide Semiconductor (BiCMOS) processes prevalent today.

REFERENCES:
patent: 3925879 (1975-12-01), Weinstein
patent: 4282464 (1981-08-01), Uzuka
patent: 2005/0045804 (2005-03-01), Park et al.

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