Visible double heterostructure-semiconductor laser

Details Visible double heterostructure-semiconductor laser Visible double heterostructure-semiconductor laser

1985-03-26

1987-12-08

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 16, 357 17, 372 44, 372 46, 372 48, H01S 319, H01L 3300

Patent

active

047122196

ABSTRACT:
A visible double heterostructure-semiconductor laser comprising an InGaAs, InAlP, InAlAs, InAlSb or InGaSb layer, a first cladding layer on the InGaAs, InAlP, InAlAs, InAlSb or InGaSb layer; an active layer on the first cladding layer and a second cladding layer on the active layer, wherein a mixed crystal of, respectively InGaAs, InAlP, InAlAs, InAlSb or InGaSb is used, as a substrate crystal for growing of said InGaAs, InAlP, InAlAs, InAlSb or InGaSb layer thereon, and the composition ratio of the substrate crystal and of each of the layers is selected so as to result in the approximate coincidence between the lattice constant of the substrate crystal and the lattice constant of each of these layers, an energy difference of 0.2 eV or more between the direct transition and the indirect transition within said active layer, and an energy difference of 0.2 eV or more between the active layer and either of the first or the second cladding layers.

REFERENCES:
patent: 4360919 (1982-12-01), Fujiwara et al.
"Barga et al.", Composition Dependence of Energy Gap in CaInAs Alloys Journal of Applied Physics, vol. 48, No. 10, Oct. 1975, p. 4608.
Applied Physics Letters, American Inst. of Physics, vol. 26, No. 9, 5/1/75, pp. 528-531, "Room-temperature Heterojunction Laser . . .".
Japanese Journal of Applied Physics, vol. 21, No. 12, Dec. 1982, pp. L731-L733, "MOCVD-grown ALO.5InO.5P-GaO Double Hetero. . . .".
Applied Physics Letters, Amer. Inst. of Physics, vol. 29, No. 12, Dec. 1976, pp. 807-809, "CW Room-temperature InxGAl-xAs/InyGal. . .".

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