Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Patent
1994-06-02
1995-09-12
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
257441, 257631, H01L 2714
Patent
active
054499437
ABSTRACT:
The light receiving or back-side surface (22) of an indium antimonide (InSb) photodetector device (10) substrate (12) is cleaned to remove all oxides of indium and antimony therefrom. Passivation and/or partially visible light blocking layers (26, 28) are then formed thereon of a material which does not react with InSb to form a structure which would have carrier traps therein and cause flashing. The optical cutoff wavelength and thickness of the partially visible light blocking layer (28) are selected to suppress the avalanche effect in the device (10) at visible wavelengths. This enables the device (10) to operate effectively over a wide wavelength range including the visible and infrared bands. The passivation and/or partially visible light blocking layers (26, 28) may be a thin layer of a semiconductor such as germanium, or silicon dioxide and/or silicon nitride followed by a partially visible light blocking silicon layer.
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Hettich Herbert L.
Kasai Ichiro
Lawrence Stephen L.
Bowers Courtney A.
Crane Sara W.
Denson-Low W. K.
Santa Barbara Research Center
Schubert W. C.
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