Virtual ground type semiconductor storage device

Details Virtual ground type semiconductor storage device Virtual ground type semiconductor storage device

1998-09-10

2000-07-11

Nelms, David

Static information storage and retrieval

Floating gate

Particular connection

36518517, G11C 1604

Patent

active

060882654

ABSTRACT:
In a virtual ground type semiconductor storage device, all of memory cells connected to one word line in blocks of eight memory cells are read in four sense operations. In each read operation, three consecutive main bit lines are discharged by a discharge signal and two memory cells which are each connected to both a discharged main bit line and a charged main bit line are used as read memory cells, whereby the influence of a leak current from both adjacent memory cells upon the read memory cells is suppressed to the minimum. Among adjust cells activated by an adjust signal, ones connected to only the charged main bit lines are designed as programmed cells to reduce a variation in leak current to a sense main bit line due to data retained in the memory cells connected to only the charged main bit lines.

REFERENCES:
patent: 5027321 (1991-06-01), Park
patent: 5392233 (1995-02-01), Iwase
patent: 5625586 (1997-04-01), Yamasaki et al.
patent: 5875128 (1999-02-01), Ishizuka

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