Vicinal gallium nitride substrate for high quality homoepitaxy

Details Vicinal gallium nitride substrate for high quality homoepitaxy Vicinal gallium nitride substrate for high quality homoepitaxy

2010-02-26

2011-10-25

Speer, Timothy (Department: 1784)

Stock material or miscellaneous articles

Composite

Of inorganic material

C428S409000, C264S162000, C264S340000

Reexamination Certificate

active

08043731

ABSTRACT:
A III-V nitride, e.g., GaN, substrate including a (0001) surface offcut from the <0001> direction predominantly toward a direction selected from the group consisting of <10-10> and <11-20> directions, at an offcut angle in a range that is from about 0.2 to about 10 degrees, wherein the surface has a RMS roughness measured by 50×50 μm2AFM scan that is less than 1 nm, and a dislocation density that is less than 3 E6 cm−2. The substrate may be formed by offcut slicing of a corresponding boule or wafer blank, by offcut lapping or growth of the substrate body on a corresponding vicinal heteroepitaxial substrate, e.g., of offcut sapphire. Both upper and lower surfaces may be offcut. The substrate is usefully employed for homoepitaxial deposition in the fabrication of III-V nitride-based microelectronic and opto-electronic devices.

REFERENCES:
patent: 5313078 (1994-05-01), Fujii et al.
patent: 5637531 (1997-06-01), Porowski et al.
patent: 6072197 (2000-06-01), Horino et al.
patent: 6447604 (2002-09-01), Flynn et al.
patent: 6455877 (2002-09-01), Ogawa et al.
patent: 6596079 (2003-07-01), Vaudo et al.
patent: 7064357 (2006-06-01), Ueta et al.
patent: 7118813 (2006-10-01), Xu et al.
patent: 7390581 (2008-06-01), Xu et al.
patent: 2001/0030329 (2001-10-01), Ueta et al.
patent: 2002/0048964 (2002-04-01), Yuasa et al.
patent: 2003/0209185 (2003-11-01), Ueno et al.
patent: 2003/0213964 (2003-11-01), Flynn et al.
patent: 2004/0238810 (2004-12-01), Dwilinski et al.
patent: 2004/0251471 (2004-12-01), Dwilinski et al.
patent: 2005/0104162 (2005-05-01), Xu et al.
patent: 2006/0228584 (2006-10-01), Xu et al.
patent: 2008/0003786 (2008-01-01), Xu et al.
patent: 2008/0199649 (2008-08-01), Xu et al.
patent: 2008/0265379 (2008-10-01), Brandes et al.
patent: H11-191657 (1999-07-01), None
patent: 2000-223743 (2000-08-01), None
patent: 2002-016000 (2002-01-01), None
patent: 2003-060318 (2003-02-01), None
patent: 2003-238297 (2003-08-01), None
patent: 0201608 (2002-01-01), None
patent: 03043150 (2003-05-01), None
patent: 2005050709 (2005-06-01), None
Motoki, K. et al., “Preparation of large freestanding GaN substrates by hydride vapor epitaxy using GaAs as a starting substrate”, Japanese Journal of Applied Physics, Feb. 15, 2001, vol. 40, pp. L140-L143.
Bockowski, M., et al., “Directional crystallization of GaN on high-pressure solution grown substrates by growth from solution and HVPE”, “J. Cryst. Growth”, Dec. 2002, pp. 194-206, vol. 246, No. 3-4.
Frayssinet, E., et al., “High electron mobility in AIGaN/GaN heterostructures grown on bulk GaN substrates”, “Appl. Phys. Letters”, Oct. 16, 2000, pp. 2551-2553, vol. 77, No. 16.
Kamp, M., et al., “GaN Homoepitaxy for Device Applications”, “MRS Internet J. Nitride Semicond. Res.”, 1999, p. G.10.2, vol. 4S1.
Nakamura, Shuji, et al., “High-Power, Long-Lifetime InGaN/GaN/AIGaN-Based Laser Diodes Grown on Pure GaN Substrates”, “Jpn. J. Appl. Phys.”, Mar. 15, 1998, pp. L309-L312, vol. 37, No. Pt. 2, No. 3B.
Ponce, F.A., et al., “Homoepitaxy of GaN on polished bulk single crystals by metalorganic chemical vapor deposition”, “Appl. Phys. Letters”, Feb. 12, 1996, pp. 917-919, vol. 7.
Porowski, S., et al., “Thermodynamical properties of III-V nitrides and crystal growth of GaN at high N2 pressure”, “J. Cryst. Growth”, Jun. 2, 1997, pp. 174-188, vol. 178, No. 1-2.
Zauner, A.R.A., et al., “Homo-epitaxial GaN growth on exact and misoriented single crystals: suppression of hillock formation”, “J. Cryst. Growth”, Mar. 2000, pp. 435-443, vol. 210, No. 4.

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