Vicinal gallium nitride substrate for high quality homoepitaxy

Details Vicinal gallium nitride substrate for high quality homoepitaxy Vicinal gallium nitride substrate for high quality homoepitaxy

2006-10-10

2006-10-10

Stein, Stephen (Department: 1775)

Stock material or miscellaneous articles

Composite

Of inorganic material

C428S697000, C117S101000, C117S104000, C117S952000, C117S953000, C438S167000, C257S103000

Reexamination Certificate

active

07118813

ABSTRACT:
A III–V nitride, e.g., GaN, substrate including a (0001) surface offcut from the <0001> direction predominantly toward a direction selected from the group consisting of <10-10> and <11-20> directions, at an offcut angle in a range that is from about 0.2 to about 10 degrees, wherein the surface has a RMS roughness measured by 50×50 μm2AFM scan that is less than 1 nm, and a dislocation density that is less than 3E6 cm−2. The substrate may be formed by offcut slicing of a corresponding boule or wafer blank, by offcut lapping or growth of the substrate body on a corresponding vicinal heteroepitaxial substrate, e.g., of offcut sapphire. The substrate is usefully employed for homoepitaxial deposition in the fabrication of III–V nitride-based microelectronic and opto-electronic devices.

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