Vibrating polishing pad conditioning system and method

Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

438693, 134 33, 134198, 156345, 216 89, B08B 700

Patent

active

058937536

ABSTRACT:
A system and method for conditioning a polishing pad in a chemical-mechanical polishing process for polishing a semiconductor device. In one aspect, a vibrating conditioning device 20 removes slurry build-up, such a slurry glaze and slurry impregnation, on the polishing pad 10 surface to enhance the polishing pad effectiveness. The vibrating conditioning device 20 includes a vibrating mechanism 30 coupled to a pad conditioning device, such as a conventional pad conditioning disk, to vibrate the pad conditioning device 20 during the conditioning operation. In another aspect, a high pressure spray device 12 removes particles from the polishing pad 10 surface to reduce damage to a semiconductor device during chemical-mechanical polishing. The high pressure spray device 12 includes a tube 22 formed to include a plurality of delivery holes 32 through which a pressurized substance is delivered onto the polishing pad 10 surface.

REFERENCES:
patent: 5522965 (1996-06-01), Chisholm et al.
patent: 5531861 (1996-07-01), Yu et al.
patent: 5578529 (1996-11-01), Mullins
patent: 5597443 (1997-01-01), Hempel
patent: 5702563 (1997-12-01), Salugsugan et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Vibrating polishing pad conditioning system and method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Vibrating polishing pad conditioning system and method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Vibrating polishing pad conditioning system and method will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-222246

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.