Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Patent
1997-06-05
1999-04-13
Powell, William
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
438693, 134 33, 134198, 156345, 216 89, B08B 700
Patent
active
058937536
ABSTRACT:
A system and method for conditioning a polishing pad in a chemical-mechanical polishing process for polishing a semiconductor device. In one aspect, a vibrating conditioning device 20 removes slurry build-up, such a slurry glaze and slurry impregnation, on the polishing pad 10 surface to enhance the polishing pad effectiveness. The vibrating conditioning device 20 includes a vibrating mechanism 30 coupled to a pad conditioning device, such as a conventional pad conditioning disk, to vibrate the pad conditioning device 20 during the conditioning operation. In another aspect, a high pressure spray device 12 removes particles from the polishing pad 10 surface to reduce damage to a semiconductor device during chemical-mechanical polishing. The high pressure spray device 12 includes a tube 22 formed to include a plurality of delivery holes 32 through which a pressurized substance is delivered onto the polishing pad 10 surface.
REFERENCES:
patent: 5522965 (1996-06-01), Chisholm et al.
patent: 5531861 (1996-07-01), Yu et al.
patent: 5578529 (1996-11-01), Mullins
patent: 5597443 (1997-01-01), Hempel
patent: 5702563 (1997-12-01), Salugsugan et al.
Brady III W. James
Donaldson Richard L.
Powell William
Texas Instruments Incorporated
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