Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2008-04-15
2008-04-15
Smith, Zandra V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S292000, C257S222000
Reexamination Certificate
active
07358583
ABSTRACT:
A CMOS image sensor (CIS) device includes an array of pixels, each pixel including a sensing element (e.g., a photodiode) and access circuitry. To facilitate the passage of light to the photodiode, each pixel includes a via wave guide (VWG) defined in the metallization layer formed over the pixel's photodiode. The VWG includes an upper light concentrator having a curved (e.g., parabolic) surface extending from a relatively wide upper opening to a relatively small lower opening. The VWG also includes a lower section extending between the lower opening of the light concentrator and the associated photodiode. A mirror coating is optionally formed on the surface of the VWG. An optional light-guiding material and/or color filter materials are disposed inside the VWG. An optional microlens is formed over the VWG.
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Amihood Doron
Cohen David
Fenigstein Amos
Reznik Hai
Bever Patrick T.
Bever Hoffman & Harms LLP
Patton Paul E
Smith Zandra V.
Tower Semiconductor Ltd.
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