Via wave guide with curved light concentrator for image...

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

Reexamination Certificate

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Details

C257S292000, C257S222000

Reexamination Certificate

active

07358583

ABSTRACT:
A CMOS image sensor (CIS) device includes an array of pixels, each pixel including a sensing element (e.g., a photodiode) and access circuitry. To facilitate the passage of light to the photodiode, each pixel includes a via wave guide (VWG) defined in the metallization layer formed over the pixel's photodiode. The VWG includes an upper light concentrator having a curved (e.g., parabolic) surface extending from a relatively wide upper opening to a relatively small lower opening. The VWG also includes a lower section extending between the lower opening of the light concentrator and the associated photodiode. A mirror coating is optionally formed on the surface of the VWG. An optional light-guiding material and/or color filter materials are disposed inside the VWG. An optional microlens is formed over the VWG.

REFERENCES:
patent: 7060961 (2006-06-01), Dobashi et al.
patent: 7135666 (2006-11-01), Dobashi
patent: 7193289 (2007-03-01), Adkisson et al.
patent: 2004/0004668 (2004-01-01), Namazue et al.
patent: 2005/0236553 (2005-10-01), Noto et al.
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patent: 2006/0081848 (2006-04-01), Niisoe et al.
patent: 2006/0113622 (2006-06-01), Adkisson et al.
patent: 2006/0115230 (2006-06-01), Komoguchi et al.
patent: 2006/0138495 (2006-06-01), Li et al.

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