Via structure using a composite dielectric layer

Details Via structure using a composite dielectric layer Via structure using a composite dielectric layer

1997-06-10

1999-08-10

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438723, 438743, 438637, H01L 2100

Patent

active

059358769

ABSTRACT:
A method for forming a semiconductor device having a via by using a composite dielectric layer is disclosed. The method includes forming a first dielectric layer over a first conductive layer disposed on a substrate, where the first dielectric layer has a first etch rate. A second dielectric layer is then formed on the first dielectric layer, where the second dielectric layer has a second etch rate higher than the first etch rate. The second dielectric layer is isotropically removed by masking and etching to form a rounded contoured recess in the second dielectric layer using the first dielectric layer as an etch stop layer. The first dielectric layer is anisotropically removed by masking and etching to form the via in the first dielectric layer, where the bottom of the rounded contoured recess is aligned to the via.

REFERENCES:
patent: 4372034 (1983-02-01), Bohr
patent: 5219791 (1993-06-01), Freiberger
patent: 5234864 (1993-08-01), Kim et al.

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