Via reactive ion etching process

Details Via reactive ion etching process Via reactive ion etching process

2006-05-16

2006-05-16

Baumeister, B. William (Department: 2891)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S710000, C438S723000, C438S743000, C438S637000, C438S638000, C438S724000, C438S744000

Reexamination Certificate

active

07045464

ABSTRACT:
Methods of etching a dielectric layer and a cap layer over a conductor level to open a via to the conductor. The methods include the provision of tetrafluoro methane (CF4) in a photoresist strip. In addition, the methods may provide an increased amount of tetrafluoro methane (CF4) in a dielectric layer etch, and trifluoro methane (CHF3) in a cap layer etch. The invention provides higher yield, more predictable etch rates, faster processing, and removes the need for an ash step.

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Armacost, M., et al. “Plasma-etching Processes for ULSI Semiconductor Circuits” IBM Journal of Research and Development, vol. 43, No. 1/2 Jan./Mar. 1999 pp. 39-72.

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