Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Bump leads
Reexamination Certificate
2005-03-08
2005-03-08
Cao, Phat X. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Bump leads
C257S738000
Reexamination Certificate
active
06864577
ABSTRACT:
A circuit includes a substrate having a dielectric layer with a first surface and a second surface. A conductive layer is formed on the first surface. A beveled via is formed in a dielectric layer of the substrate. The via has a first opening of a first width in the first surface, and a second opening of a second width in the second surface, the second width being greater than the first width. A conductive plug is connected to the conductive layer. The plug is formed in the via and extends from adjacent the first opening toward the second opening, and terminates adjacent the second opening at a plug interface surface. A conductive solder ball is connected to the plug interface surface and extends to protrude from the second surface.
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Product Brochure, “Single Chip Bumping for Flip Chip Applications,” Packaging Technologies GmbH, Reinckestrasse 8, 14612 Falkensee, Germany.
Product Brochure, “Wafer Bumping Service,” Packaging Technologies GmbH, Reinickestrasse 8, 14612 Falkensee, Germany.
J.H. Lau and Y.H. Pao,Solder Joint Reliability of BGS, CSP, Flip Chip, and Fine Pitch SMT Assemblies, pp. 257-258, McGraw Hill, New York (1997).
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Clatanoff William J.
Saito Yusuke
Schubert Robert J.
Schueller Gayle R. T.
Yamazaki Hideo
Cao Phat X.
Gover Melanie G.
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