Via metallization for AlN ceramic electronic package

Details Via metallization for AlN ceramic electronic package Via metallization for AlN ceramic electronic package

1991-08-22

1993-04-06

Ryan, Patrick J.

Stock material or miscellaneous articles

Structurally defined web or sheet

Including aperture

428209, 428210, 428901, 264 65, 501 96, 501 97, B32B 300

Patent

active

052002497

ABSTRACT:
Metallization formulations containing a mixture of AlN and metal are used to form hermetic vias in AlN dielectric bases for electronic packaging. The metal may be W, Mo, or mixtures thereof. The metallization may be cofired with the AlN dielectric base. The metallization is especially useful for making electrically conductive hermetic through-vias in AlN bases.

REFERENCES:
patent: 4770953 (1988-09-01), Horiguchi et al.
patent: 4800137 (1989-01-01), Okuno et al.
patent: 4818626 (1989-04-01), Werdecker et al.
patent: 4883704 (1989-11-01), Sato et al.
patent: 4894273 (1990-01-01), Lieberman et al.
patent: 4965659 (1990-10-01), Sasame et al.

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