Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2011-08-16
2011-08-16
Gurley, Lynne A (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S621000, C257S698000, C257SE21476, C257SE23010
Reexamination Certificate
active
07999389
ABSTRACT:
A via hole structure and a manufacturing method thereof are provided. The via hole structure is disposed on a substrate. The substrate has a through hole, which passes through the substrate from a top surface to a bottom surface. The via hole structure comprises a conductive layer, several first conductive lines and several second conductive lines. The conductive layer having several conductive sections is disposed on the inner wall of the through hole. The first conductive lines are adjacent to the top surface for connecting the top ends of the conductive sections. The second conductive lines are adjacent to the bottom surface for connecting the bottom ends of the conductive sections. The conductive sections, the first conductive lines and the second conductive lines are serially connected to form a three-dimension layout.
REFERENCES:
patent: 2002/0095770 (2002-07-01), Ahn et al.
Advanced Semiconductor Engineering Inc.
Bacon & Thomas PLLC
Gurley Lynne A
Webb Vernon P
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