Via hole profile and method of fabrication

Details Via hole profile and method of fabrication Via hole profile and method of fabrication

1994-10-17

1995-11-28

Fourson, George

Fishing, trapping, and vermin destroying

437194, 437195, 437246, 437947, 437981, 257774, H01L 21302

Patent

active

054707900

ABSTRACT:
A novel high performance and reliable interconnection structure for preventing via delamination. The interconnection structure of the present invention comprises a via connection which extends into and undercuts an underlying interconnection line to lock the via connection into the interconnection line.

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Hasegawa, et al., Via Filling on AI Films by Selective CVD W Using Al Isotropic Etching, Japan Society of Appl. Physics, 52nd Fall Meeting Extended Abstracts, p. 718 (Oct. 1991).
Weide, K. et al., 3-Dimensional Simulations of Temperature and Current Density Distribution in a Via Structure, IEEE/IRPS, pp. 361-365, (Jan. 1992).
Totta, Paul A., Stress Induced Phenomena in Metallizations: U.S. Perspective, American Institute of Physics, pp. 1-20, (1992).
Gardner, D. et al., Layered and Homogeneous Films of Aluminum and Aluminum/Silicon with Titanitum, Zirconium, and Tungsten for Multilevel Interconnects, IEDM 84, pp. 114-117 (1984).
Gardner, D. et al., Interconnection and Electromigration Scaling Theory, IEEE Transactions on Electron Devices, vol. ED-34, No. 3, pp. 632-643, (Mar. 1987).

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