Via hole forming method

Electric heating – Metal heating – By arc

Reexamination Certificate

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Reexamination Certificate

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07919725

ABSTRACT:
A method of forming a via hole reaching a bonding pad in a wafer having a plurality of devices on the front surface of a substrate and bonding pads on each of the devices, by applying a laser beam from the rear surface side of the substrate, comprising the steps of forming an annular groove by applying a laser beam to an annular area surrounding a via hole forming area on the rear surface of the substrate; and forming a via hole reaching a bonding pad by applying a laser beam to the via hole forming area surrounded by the annular groove from the rear surface side of the substrate.

REFERENCES:
patent: 6822324 (2004-11-01), Tao et al.
patent: 2004/0112881 (2004-06-01), Bloemeke et al.
patent: 2007/0045254 (2007-03-01), Morikazu
patent: 2-133189 (1990-05-01), None
patent: 4-273195 (1992-09-01), None
patent: 2000-197987 (2000-07-01), None
patent: 2000-202664 (2000-07-01), None
patent: 2002-217551 (2002-08-01), None
patent: 2003-163323 (2003-06-01), None
patent: 2005-28428 (2005-02-01), None
patent: 2007-67082 (2007-03-01), None
Machine translation of Japan Patent document No. 2000-2002,664, Apr. 2010.
Machine translation of Japan Patent document No. 2002-217,551, Apr. 2010.

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