Coating processes – Electrical product produced – Welding electrode
Patent
1988-04-12
1990-07-03
Childs, Sadie
Coating processes
Electrical product produced
Welding electrode
427 96, 427250, B05D 306, B05D 512
Patent
active
049389963
ABSTRACT:
Light from a Q-switched laser passes through a metal-containing gas and through a field oxide of an integrated circuit structure. The laser light is preferentially absorbed by an underlying substrate. The substrate, but not the oxide, is heated above a threshold temperature that allows rapid chemical vapor deposition of metal through a relatively deep via hole in the oxide. The oxide has low thermal conductivity. The upper portions of the via hole walls are not heated enough to allow deposition of metal thereon. The via hole therefore can be uniformly filled by deposition of the metal on the bottom of the via hole, with no obstruction or shadowing from buildup of deposited metal on the upper wall portions of the via hole.
REFERENCES:
patent: 4359485 (1982-11-01), Donnelly et al.
patent: 4465716 (1984-08-01), Baber et al.
patent: 4511595 (1985-04-01), Inoue
patent: 4526807 (1985-07-01), Auerbach
patent: 4544577 (1985-10-01), May
patent: 4624736 (1986-11-01), Gee et al.
patent: 4659587 (1987-04-01), Imura et al.
patent: 4699801 (1987-10-01), Ito et al.
patent: 4701592 (1987-10-01), Cheung
Levy and Green Low Pressure Chemical Vapor Deposition of Tungsten and Aluminum for VLSI Applications, Mat. Res. Soc. Symp. Proc. vol. 71 1986 Materials Research Survey, pp. 229-247.
Ehrlich and Tsao, Laser Fabrication of Microstructures: Effect of Geometrical Scaling on Chemical Reaction Rates*, Mat. Res. Soc. Symp. Proc. vol. 17 (1983), Elsevier Science Publishing Co., Inc., pp. 3-9.
Dieter Bauerle, Angewandte Physik, Johannes Kepler Universitat A-4040 Linz, Austria, Laser-Induced Chemical Vapor Deposition, pp. 166-183.
Herman, Laser Fabrication of Integrated Circuits, University of California, Lawrence Livermore National Laboratory, Department of Physics, P.O. Box 808, L-278, Livermore, CA 94550, U.S.A., pp. 396-416.
R. Freese, Alphatronix Inc., Optical Disks Become Erasable, IEEE Spectrum, Feb. 1988, 0018-9235/88/0200-0041, pp. 41-45.
Allen, Jan, Edwards, Mazuk and Vernon, Optical and Thermal Effects in Laser Chemical Vapor Deposition, SPIE vol. 459, Laser Assisted Deposition, Etching, and Doping (1984), pp. 42-48.
Y. Rytz-Froidevaux and R. P. Salathe, Laser-Induced Deposition of Metals, SPIE vol. 459 Laser Assisted Deposition, Etching, and Doping (1984), pp. 55-60.
Ghate, Interconnections in VLSI, Physics Today, Oct. 1986, 0031-9228/86/1000, 58-09, pp. 58-66.
Diem, Fisk and Goldman, Properties of Chemically Vapor-Deposited Tungsten Thin Films on Silicon Wafers, Electronics and Optics, Thin Solid Films, 107 (1983), pp. 39-43.
Ehrlich, Osgood, Jr., and Deutsch, Direct Writing of Refractory Metal Thin Film Structures by Laser Photodeposition, Accelerated Brief Communication, Sep. 1981, vol. 128, No. 9, pp. 2039-2041.
Kozicki Michael N.
Ziv Alan R.
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