Via filling by selective laser chemical vapor deposition

Details Via filling by selective laser chemical vapor deposition Via filling by selective laser chemical vapor deposition

1990-04-23

1991-10-29

Bueker, Richard

Coating apparatus

Gas or vapor deposition

With treating means

427 431, 427 531, C23C 1648

Patent

active

050605950

ABSTRACT:
Light from a Q-switched laser passes through a metal-containing gas and through a field oxide of an integrated circuit structure. The laser light is preferentially absorbed by an underlying substrate. The substrate, but not the oxide, is heated above a threshold temperature that allows rapid chemical vapor deposition of metal through a relatively deep via hole in the oxide. The oxide has low thermal conductivity. The upper portions of the via hole walls are not heated enough to allow deposition of metal thereon. The via hole therefore can be uniformly filled by deposition of the metal on the bottom of the via hole, with no obstruction or shadowing from buildup of deposited metal on the upper wall portions of the via hole.

REFERENCES:
patent: 4936252 (1990-06-01), Yajima

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