Via etch monitoring

Electricity: measuring and testing – Impedance – admittance or other quantities representative of... – Lumped type parameters

Reexamination Certificate

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C324S719000

Reexamination Certificate

active

11242057

ABSTRACT:
A method for monitoring the depth of at least one via (11) in a wafer including the steps of arranging the via (11) as a capacitive plate (21), providing a corresponding capacitive plate (23), applying an electrical potential difference to the via (11) and the corresponding capacitive plate (23), measuring the resultant capacitance between the via (11) and a corresponding capacitive plate (23) and determining the depth of the at least one via (11) by the capacitance.

REFERENCES:
patent: 5646538 (1997-07-01), Lide et al.
patent: 5838161 (1998-11-01), Akram et al.
patent: 2004/0227527 (2004-11-01), Bortesi et al.

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