Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2009-04-28
2010-11-09
Smith, Bradley K (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S758000
Reexamination Certificate
active
07830019
ABSTRACT:
A method of fabricating a device includes depositing a electromigration (EM) resistive material in an etched trench formed in a substrate and a wiring layer. The EM resistive material is formed in electrical contact with an underlying diffusion barrier layer and wiring layer. The method further includes forming a via structure in electrical contact with the EM resistive material and the wiring layer. The method results in a structure which prevents an open circuit.
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English machine translation of JP2002-064139.
Chanda Kaushik
Clevenger Lawrence A.
Cowley Andrew P.
Gill Jason P.
Li Baozhen
International Business Machines - Corporation
Kotulak Richard
Roberts Mlotkowski Safran & Cole P.C.
Smith Bradley K
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