Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2006-05-09
2008-05-20
Chambliss, Alonzo (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S774000, C257S776000, C257S786000, C361S767000, C361S776000, C361S262000, C174S261000, C174S262000
Reexamination Certificate
active
07375432
ABSTRACT:
An interconnect includes a pad and at least two vias coupled to the pad. In one embodiment, the pad has five substantially straight edges, one via directly coupled to the pad by being formed substantially beneath the pad, and one via coupled to one of the five substantially straight edges by a tapered conductive segment. In another embodiment, the pad has three vias directly coupled to the pad and formed substantially beneath the pad. A method of forming an interconnect includes forming at least two vias in a substrate and coupling a pad to each of the at least two vias.
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Chambliss Alonzo
Intel Corporation
Schwegman Lundberg & Woessner, P.A.
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