Vessel made from pyrolytic boron nitride

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state

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117900, 117952, C30B 2938

Patent

active

056743173

ABSTRACT:
Proposed is a novel vessel such as crucibles made from PBN (pyrolytic boron nitride), which is highly resistant against exfoliation of the surface layer and suitable for use, for example, as a container of the melt in the Czochralski single crystal growing of III-V Group compound semiconductor single crystals with an improvement in the serviceable life. The PBN-made vessel of the invention is characterized by specific values of several parameters including density, which should be in the range from 1.90 to 2.05 g/cm.sup.3, intensity ratio of the X-ray diffraction peaks representing the degree of orientation, heat conductivity coefficient and the like. The above mentioned advantageous serviceable life of the vessel can be obtained only when these parameter values are satisfied.

REFERENCES:
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patent: 4478675 (1984-10-01), Akai
patent: 4690841 (1987-09-01), Tanji et al.
patent: 5032366 (1991-07-01), Finicle
patent: 5158750 (1992-10-01), Finicle

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