Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state
Patent
1996-01-11
1997-10-07
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
For crystallization from liquid or supercritical state
117900, 117952, C30B 2938
Patent
active
056743173
ABSTRACT:
Proposed is a novel vessel such as crucibles made from PBN (pyrolytic boron nitride), which is highly resistant against exfoliation of the surface layer and suitable for use, for example, as a container of the melt in the Czochralski single crystal growing of III-V Group compound semiconductor single crystals with an improvement in the serviceable life. The PBN-made vessel of the invention is characterized by specific values of several parameters including density, which should be in the range from 1.90 to 2.05 g/cm.sup.3, intensity ratio of the X-ray diffraction peaks representing the degree of orientation, heat conductivity coefficient and the like. The above mentioned advantageous serviceable life of the vessel can be obtained only when these parameter values are satisfied.
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patent: 5032366 (1991-07-01), Finicle
patent: 5158750 (1992-10-01), Finicle
Itou Kenji
Kimura Noboru
Kunemund Robert
Shin-Etsu Chemical Co. , Ltd.
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