Very thin silicon wafer base solar cell

Details Very thin silicon wafer base solar cell Very thin silicon wafer base solar cell

1980-10-02

1982-07-06

Weisstuch, Aaron

Batteries: thermoelectric and photoelectric

Photoelectric

Cells

29572, 148175, 148190, 357 30, H01L 3106, H01L 3118

Patent

active

043384811

ABSTRACT:
The performance and ruggedness of very thin silicon back surface field (BSF) solar cells are improved by the formation of a relatively thick, epitaxially grown, highly doped layer at the back of the cell and the formation of an arsenic doped layer at the top of the cell within the phosphorous diffused front region.
As a result of these modifications and the method used for fabricating the modified cell, highly effective barriers, which diminish mobile charge loss by recombination, are created at the front and back of the cell base. The cell, consisting of a high resistivity, high minority carrier lifetime, very thin base sandwiched between effective barriers, permits achievement of almost ideal performance and has improved radiation damage resistance.
The ruggedness of the very thin base cell is due to the addition of the relatively thick epitaxial layer in back of the base.

REFERENCES:
patent: 3460240 (1969-08-01), Tarneja et al.
R. V. D'Aiello et al., "Epitaxial Silicon Solar Cells", Appl. Phys. Lett., vol. 28, pp. 231-234 (1976).

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