Electricity: electrical systems and devices – Electrostatic capacitors – Fixed capacitor
Patent
1998-07-20
2000-10-03
Kincaid, Kristine
Electricity: electrical systems and devices
Electrostatic capacitors
Fixed capacitor
3613014, 257306, H01G 4002, H01G 433
Patent
active
061281786
ABSTRACT:
A capacitor and a dynamic random access memory (DRAM) incorporating such a capacitor, includes a first layer of conducting, doped perovskite material, a second layer of another conducting, doped perovskite of opposite polarity in contact with the first layer, and a depletion layer formed at an interface between the first and second layers of conducting perovskite materials, the depletion layer being an insulating layer of the capacitor. Another capacitor and DRAM incorporating such a capacitor, includes a first electrode, a second electrode opposing the first electrode, and a thin-film of high dielectric constant perovskite material sandwiched between the first and second electrodes. At least one of the first and second electrodes is formed from substantially the same perovskite material, as the thin-film, in conducting, doped form.
REFERENCES:
patent: 5155658 (1992-10-01), Inam et al.
patent: 5479317 (1995-12-01), Ramesh
patent: 5519235 (1996-05-01), Ramesh
patent: 5760432 (1998-06-01), Abe et al.
patent: 5986301 (1999-11-01), Fukushima et al.
International Business Machines - Corporation
Kincaid Kristine
Thomas Eric
LandOfFree
Very thin film capacitor for dynamic random access memory (DRAM) does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Very thin film capacitor for dynamic random access memory (DRAM), we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Very thin film capacitor for dynamic random access memory (DRAM) will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-201651